Transistors for aerospace applications encompass bipolar junction transistors (BJTs), field-effect transistors (FETs), metal-oxide-semiconductor FETs (MOSFETs), and high-electron-mobility transistors (HEMTs), fabricated from silicon, silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN) substrates to meet MIL-PRF qualification requirements for switching, amplification, and power regulation in avionics and defence systems.
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